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4,000
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icHub/RightIC Electronics
Shenzhen
Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
26/01/16
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  • TX Qty --
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  • TX Amount --
  • Return 4wk p.f
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PV: 0 TX AMT: 0
ProdCode
001263596
ECCN
EAR99
HSCode
8541290000
Product Manual
Data Sheetpdf
EOL
No Data Sheet
Desc.
Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SKU
MCD24999XS---
Categ
Material>
Components>
Discrete>
MOSFET
Packing Type
整包
SPQ
1
C.O.
--
Net weight
1.9332gram
Inv. Class
--
Product#
B000042419665
Name
MOSFET
Mem.
尹倞
FS
是
Return
履约后4周
Discount
--
Margin Rate
0.00%
    4000:
    ¥1.1121
2000
4000
¥4448.40
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纠错
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EAR99 ECCN Number EC0001
  • RegionChina
  • Level NLR
  • Desc.
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8541290000 Code CN8541290000H
  • NameTransistors with dissipated power ≥1W (excluding photo-sensitive transistors); transistors
  • CountryChina
  • Regulation
  • Quarantine
  • Import tax rate0.00%
  • Export tax rate0.00%
  • U.S. tariff rate25.00%
  • Desc.
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  • Desc.
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